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公開日期標題作者
六月-20163D resistive RAM cell design for high-density storage class memory-a reviewHudec, Boris; Hsu, Chung-Wei; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Wang, Taifang; Frohlich, Karol; Ho, Chia-Hua; Lin, Chen-Hsi; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-20133D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating CurrentHsu, Chung-Wei; Wan, Chia-Chen; Wang, I-Ting; Chen, Mei-Chin; Lo, Chun-Li; Lee, Yao-Jen; Jang, Wen-Yueh; Lin, Chen-Hsi; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2010Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory FilmsLin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2010Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory FilmsLin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
十月-2016Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer StructureTsai, Tsung-Ling; Jiang, Fa-Shen; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2012Flexible One Diode-One Resistor Crossbar Resistive-Switching MemoryHuang, Jiun-Jia; Hou, Tuo-Hung; Hsu, Chung-Wei; Tseng, Yi-Ming; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi; 電子物理學系; Department of Electrophysics
1-四月-2011High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory DevicesLin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2011High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory DevicesLin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-七月-2010High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devicesLin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-七月-2010High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devicesLin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation LayerWu, Ming-Chi; Lin, Meng-Han; Yeh, Yu-Ting; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM DevicesHuang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2008Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layerLin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-五月-2015Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structureChand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2011Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAMWu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2011Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAMWu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2006Resistive switching mechanisms of V-doped SrZrO3 memory filmsLin, Chun-Chieh; Tu, Bing-Chung; Lin, Chao-Cheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十二月-2007Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin filmsLin, Chih-Yang; Lin, Chun-Chieh; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2007Resistive switching properties of SrZrO(3)-based memory filmsLin, Chun-Chieh; Lin, Chao-Cheng; Tu, Bing-Chung; Yu, Jung-Sheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-十二月-2007Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin filmsLin, Chun-Chieh; Yu, Jung-Sheng; Lin, Chih-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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