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公開日期標題作者
1-一月-2017A Comprehensive Study of 3-stage High Resistance State Retention Behavior for TMO ReRAMs from Single Cells to a Large ArrayLin, Yu-Hsuan; Ho, Yung-Han; Lee, Ming-Hsiu; Wang, Chao-Hung; Lin, Yu-Yu; Lee, Feng-Ming; Hsu, Kai-Chieh; Tseng, Po-Hao; Lee, Dai-Ying; Chiang, Kuang-Hao; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Excellent Resistance Variability Control of WOx ReRAM by a Smart Writing AlgorithmLin, Yu-Hsuan; Wu, Jau-Yi; Lee, Ming-Hsiu; Wang, Tien-Yen; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Hsieh, Kuang-Yeu; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
十一月-2016A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAMLin, Yu-Hsuan; Lee, Ming-Hsiu; Wu, Jau-Yi; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Chiang, Kuang-Hao; Lai, Erh-Kun; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2019Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic ComputingLin, Yu-Hsuan; Wang, Chao-Hung; Lee, Ming-Hsiu; Lee, Dai-Ying; Lin, Yu-Yu; Lee, Feng-Min; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten PlugsLai, Erh-Kun; Chien, Wei-Chih; Chen, Yi-Chou; Hong, Tian-Jue; Lin, Yu-Yu; Chang, Kuo-Pin; Yao, Yeong-Der; Lin, Pang; Horng, Sheng-Fu; Gong, Jeng; Tsai, Shih-Chang; Lee, Ching-Hsiung; Hsieh, Sheng-Hui; Chen, Chun-Fu; Shih, Yen-Hao; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan; 材料科學與工程學系; Department of Materials Science and Engineering
2012使用核關聯之非剛性形體對齊與對應林育右; Lin, Yu-Yu; 莊榮宏; 黃世強; Chuang, Jung-Hong; Wong, Sai-Keung; 資訊科學與工程研究所