標題: | A Comprehensive Study of 3-stage High Resistance State Retention Behavior for TMO ReRAMs from Single Cells to a Large Array |
作者: | Lin, Yu-Hsuan Ho, Yung-Han Lee, Ming-Hsiu Wang, Chao-Hung Lin, Yu-Yu Lee, Feng-Ming Hsu, Kai-Chieh Tseng, Po-Hao Lee, Dai-Ying Chiang, Kuang-Hao Wang, Keh-Chung Tseng, Tseung-Yuen Lu, Chih-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-Jan-2017 |
摘要: | For the first time the retention of high resistance state (HRS) in resistive random access memory (ReRAM) is found to compose of three stages - extending tail-bits, distribution shift, and then distribution broadening. This work provides a comprehensive study on the HRS's retention behavior in WOx-based ReRAMs from single device characteristics to group distribution. Different from conventional activation energy (Ea) analysis, the mean and variance of the array distribution are presented to overcome the non-uniform Ea issue. Since the extracted Ea fits well with Vo(2+) (oxygen vacancy) migration characteristics, the three retention stages are suggested to be the competing results from the migration, recombination, and generation of the Vo(2+) and O2- in the gap region. A three-dimensional retention model with kinetic Monte Carlo simulator and trap-assisted tunneling conduction is proposed to discuss the dominating mechanism in different time and temperature scales. The mechanism for random telegraph noise is also included to illustrate the fluctuating nature of the HRS cells. |
URI: | http://hdl.handle.net/11536/146906 |
ISSN: | 2380-9248 |
期刊: | 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) |
Appears in Collections: | Conferences Paper |