標題: A Study of the Relationship Between Endurance and Retention Reliability for a HfOx-Based Resistive Switching Memory
作者: Chung, Wei-Min
Chang, Yao-Feng
Hsu, Yu-Lin
Chen, Y. -C. Daphne
Lin, Chao-Cheng
Lin, Chang-Hsieh
Leu, Jihperng
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Resistive switching;HfOx-based ReRAM;reliability;endurance and retention interaction
公開日期: 1-九月-2020
摘要: This study determines the relationship between retention and endurance reliability for a HfOx-based resistive random access memory (ReRAM). A TiN (15 nm) / HfOx (6 nm) / Ti (10 nm) / TiN (40 nm) stacked structure is fabricated and tested to verify its basic characteristics and reliability. The high resistance states (HRS) retention behavior is characterized and is found to degrade over 100x on the endured bits because there is a sequential high temperature procedure. The degradation is reduced slightly to a similar to 30x drop for the endured devices with one single refresh cycle. During the endurance and retention test procedures, the HRS resistance decreases because neutral oxygen vacancy filaments grow and this cannot be reversed. The I-V characteristics for endured devices are also determined. The results show that isothermal treatment causes a gradual SET and RESET process with multiple feasible states. The thermally induced filament degradation model (isolated filament vs. continuous filament) is verified by the relationship between retention and endurance reliability. Design guidance is recommended for an improvement in ReRAM reliability.
URI: http://dx.doi.org/10.1109/TDMR.2020.3007172
http://hdl.handle.net/11536/155362
ISSN: 1530-4388
DOI: 10.1109/TDMR.2020.3007172
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 20
Issue: 3
起始頁: 541
結束頁: 547
顯示於類別:期刊論文