Excellent High Temperature Retention of TiOXNV ReRAM by Interfacial Layer Engineering

Abstract

Since the resistance switching of the transition metal oxide (TMO) resistive random access memory (ReRAM) is based on thc interaction between the oxygen ions and vacancies, the unintentional oxygen/vacancy reaction should be avoided during data retention. This work demonstrates significant improvements on the retention performance by inserting a Si layer in the TiO Ny ReRAM to block the diffusion of oxygen ions through the Ti/TiO,N interface. The mechanism and factors that influenced thc IIRS and LRS retention arc also studied. The retention performance of HRS is correlated with its RESET level while the LRS retention depends on the programming current. The proposed Ti/Si/TiO,N, ReRAMs can switch for more than 103 cycles from array testing results.