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顯示 1 到 14 筆資料，總共 14 筆
公開日期標題作者
1-十月-1998Effects of CoSi2 on p(+) polysilicon gates fabricated by BF2+ implantation into CoSi amorphous Si bilayersCheng, HC; Lai, WK; Liu, HW; Juang, MH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1999Effects of rapid thermal annealing on cobalt silicided p(+) poly-Si gates fabricated by BF2+ implantation into bilayered CoSi/a-Si filmsLai, WK; Liu, HW; Juang, MH; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1997Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitorsLiu, HW; Lai, WK; Yu, SY; Huang, SC; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1997Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitorsLiu, HW; Lai, WK; Yu, SY; Huang, SC; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2005Enhanced phosphorescence and electroluminescence in triplet emitters by doping gold into cadmium selenide/zinc sulfide nanoparticlesLiu, HW; Laskar, IR; Huang, CP; Cheng, JA; Cheng, SS; Luo, LY; Wang, HR; Chen, TM; 應用化學系; Department of Applied Chemistry
1-九月-1998Excellent low-pressure-oxidized Si3N4 films on roughened poly-si for high-density DRAM'sLiu, HW; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Formation and properties of roughened poly-Si electrodes for high-density DRAMsLiu, HW; Lin, ZJ; Yu, SY; Huang, SC; Cheng, SC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-七月-1998A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent annealLai, WK; Liu, HW; Juang, MH; Chen, NC; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Observing enhanced phosphorescence and electroluminescence from triplet emitter by quantum dot dopingLaskar, IR; Liu, HW; Huang, CP; Cheng, JA; Chen, TM; 應用化學系; Department of Applied Chemistry
1-一月-2005Observing enhanced phosphorescence and electroluminescence from triplet emitter by quantum dot dopingLaskar, IR; Liu, HW; Huang, CP; Cheng, JA; Chen, TM; 應用化學系; Department of Applied Chemistry
1-九月-1997The oxidation mechanism of low-pressure dry oxidation of nitrides for memory devicesLiu, HW; Su, HP; Lai, WK; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997The oxidation mechanism of low-pressure dry oxidation of nitrides for memory devicesLiu, HW; Su, HP; Lai, WK; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-七月-2005Plate-based biochemical assay using quantum dots as a fluorescent labeling agentHuang, CP; Liu, HW; Tsao, CY; Yin, LT; Chiu, SF; Chen, TM; 應用化學系; Department of Applied Chemistry
22-七月-2005Plate-based biochemical assay using quantum dots as a fluorescent labeling agentHuang, CP; Liu, HW; Tsao, CY; Yin, LT; Chiu, SF; Chen, TM; 應用化學系; Department of Applied Chemistry
顯示 1 到 14 筆資料，總共 14 筆