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Issue DateTitleAuthor(s)
1-Jul-2011Bipolar resistive switching effect in Gd(2)O(3) films for transparent memory applicationLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2011Bipolar resistive switching effect in Gd2O3 films for transparent memory applicationLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2013Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devicesZhong, Chia-Wen; Tzeng, Wen-Hsien; Liu, Kou-Chen; Lin, Horng-Chih; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-Dec-2010The effect of plasma deposition on the electrical characteristics of Pt/HfO(x)/TiN RRAM deviceLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Wu, Chi-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-Dec-2010The effect of plasma deposition on the electrical characteristics of Pt/HfOx/TiN RRAM deviceLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Wu, Chi-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2010Effect of ultraviolet light exposure on a HfO(x) RRAM deviceLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2010Effect of ultraviolet light exposure on a HfOx RRAM deviceLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2016Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistorsZhong, Chia-Wen; Lin, Horng-Chih; Tsai, Jung-Ruey; Liu, Kou-Chen; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Apr-2016Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistorsZhong, Chia-Wen; Lin, Horng-Chih; Tsai, Jung-Ruey; Liu, Kou-Chen; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Jan-2016Impact of thermal oxygen annealing on the properties of tin oxide films and characteristics of p-type thin-film transistorsZhong, Chia-Wen; Lin, Horng-Chih; Liu, Kou-Chen; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2016Impact of thermal oxygen annealing on the properties of tin oxide films and characteristics of p-type thin-film transistorsZhong, Chia-Wen; Lin, Horng-Chih; Liu, Kou-Chen; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2015Improving Electrical Performances of p-Type SnO Thin-Film Transistors Using Double-Gated StructureZhong, Chia-Wen; Lin, Horng-Chih; Liu, Kou-Chen; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2011Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristicsLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Huang, Jiun-Jie; Lee, Yun-Ju; Yeh, Ping-Hung; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2010Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx filmChang, Kow-Ming; Tzeng, Wen-Hsien; Liu, Kou-Chen; Chan, Yi-Chun; Kuo, Chun-Chih; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2010The resistive switching characteristics of a Ti/Gd(2)O(3)/Pt RRAM deviceLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Cheng, Chun-Wen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2010The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM deviceLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Cheng, Chun-Wen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2012Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin filmTzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
6-Feb-2020Role of Depolarization Factors in the Evolution of a Dipolar Plasmonic Spectral Line in the Far- and Near-Field RegimesJanuar, Mochamad; Liu, Bei; Cheng, Jui-Ching; Hatanaka, Koji; Misawa, Hiroaki; Hsiao, Hui-Hsin; Liu, Kou-Chen; 交大名義發表; National Chiao Tung University
1-May-2013Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser depositionHo, Yen-Teng; Chang, Kuo-Shu; Liu, Kou-Chen; Hsieh, Li-Zen; Liang, Mei-Hui; 材料科學與工程學系; Department of Materials Science and Engineering
2010Transparent resistive random access memory (T-RRAM) based on Gd2O3 film and its resistive switching characteristicsLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Cheng, Chun-Wen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 21  next >