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公開日期標題作者
1-七月-2002Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatmentMor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applicationsHu, JC; Chang, TC; Wu, CW; Chen, LJ; Hsiung, CS; Hsieh, WY; Lur, W; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1995Low temperature processed poly-Si thin-film transistors with thinner LPD-SiO2 as gate insulator and its reliabilityFan, CL; Yeh, CF; Tsai, HK; Lur, W; Yen, PW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2000Shallow-trench isolation with raised-field-oxide structureChen, CM; Chang, CY; Chou, JW; Lur, W; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2002Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processingChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Chu, CJ; Pan, FM; Lur, W; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆