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公開日期標題作者
1-九月-2005Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunnelingWu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trappingChan, CT; Ma, HC; Tang, CJ; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunnelingWu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETsChan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-十一月-2004Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistorsWu, JW; You, JW; Ma, HC; Cheng, CC; Chang, CS; Huang, GW; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆