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公開日期標題作者
20-四月-2005A 0.18-mu m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvementsMeng, CC; Hsu, SK; Wu, TH; Huang, GW; 電信工程研究所; Institute of Communications Engineering
20-一月-2003A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technologyMeng, CC; Chiang, MH; Wu, TH; 電信工程研究所; Institute of Communications Engineering
1-六月-20064.9-GHz low-phase-noise transformer-based superharmonic-coupled GaInP/GaAs HBT QVCOMeng, CC; Chang, YW; Tseng, SC; 資訊工程學系; Department of Computer Science
1-八月-20065.2-GHz GaInP/GaAs HBT cascode LNA with 5.5 dB gain enhancement using inter-stage LC matchingMeng, CC; Jhong, JC; 電信工程研究所; Institute of Communications Engineering
4-八月-20055.4GHz-127 dBc/Hz at 1MHz GaInP/GaAs HBT quadrature VCO using stacked transformersMeng, CC; Chen, CH; Chang, YW; Huang, GW; 電信工程研究所; Institute of Communications Engineering
1-六月-2005A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technologyWu, TH; Meng, CC; Wu, TH; Huang, GW; 電信工程研究所; Institute of Communications Engineering
1-九月-2005Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulationsMeng, CC; Su, JY; Yang, SM; 電信工程研究所; Institute of Communications Engineering
1-十月-2005Compact 5.2-GHz GaInP/GaAs HBT gilbert upconverter using lumped rat-race hybrid and current combinerMeng, CC; Wu, TH; Lin, MC; 電信工程研究所; Institute of Communications Engineering
5-十月-2004DC to 6-Ghz high-gain low-noise GaInP/GaAs HBT direct-coupled amplifiers with and without emitter-capacitive peakingMeng, CC; Wu, TH; Lu, SS; 電信工程研究所; Institute of Communications Engineering
17-四月-2003DC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technologyMeng, CC; Lu, SS; Chiang, MH; Chen, HC; 電信工程研究所; Institute of Communications Engineering
20-三月-2004DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 mu M SiGe HBT technologyMeng, CC; Wu, TH; Huang, GW; 電信工程研究所; Institute of Communications Engineering
1-一月-2005The determination of S-parameters from the poles of voltage-gain transfer function for RF IC designLu, SS; Lin, YS; Chiu, HW; Chen, YC; Meng, CC; 電信工程研究所; Institute of Communications Engineering
1-六月-2005Determining GaInP/GaAs HBT device structure by DC measurements on a two-emitter HBT device and high frequency transit time measurementsMeng, CC; Tsou, BC; Tseng, SC; 電信工程研究所; Institute of Communications Engineering
5-二月-2004Edge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by P(+) substrateMeng, CC; 電信工程研究所; Institute of Communications Engineering
1-四月-2006The effect of selectively and fully ion-implanted collector on RF characteristics of BJT devicesMeng, CC; Su, JY; Tsou, BC; Huang, GW; 電信工程研究所; Institute of Communications Engineering
1-一月-2003A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillatorMeng, CC; Hsu, SK; Peng, AS; Wen, SY; Huang, GW; 電信工程研究所; Institute of Communications Engineering
2003A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillatorMeng, CC; Hsu, SK; Peng, AS; Wen, SY; Huang, GW; 電信工程研究所; Institute of Communications Engineering
2005A fully integrated 5.2 GHz SiGe HBT upconversion micromixer using lumped balun and LC current combinerWu, TH; Meng, CC; Wu, TH; Huang, GW; 電信工程研究所; Institute of Communications Engineering
5-十一月-2004A fully integrated 5.2-GHz single-ended-in and single-ended-out 0.18-mu m CMOS Gilbert upconverterMeng, CC; Lin, MQ; Huang, GW; 電信工程研究所; Institute of Communications Engineering
5-十月-2004A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-Ghz multiband WLAN applicationsWang, CY; Lu, SS; Meng, CC; Lin, YS; 電信工程研究所; Institute of Communications Engineering
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