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公開日期標題作者
15-九月-2019Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratioAnandan, Deepak; Nagarajan, Venkatesan; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
15-一月-2019Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVDAnandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2020Low-Frequency Noise Characterization of AlGaN & x002F;GaN HEMTs and MIS-HEMTs Under UV IlluminationNagarajan, Venkatesan; Chen, Kun-Ming; Lin, Hsin-Yi; Hu, Hsin-Hui; Huang, Guo-Wei; Lin, Chuang-Ju; Chen, Bo-Yuan; Anandan, Deepak; Singh, Sankalp Kumar; Wu, Chai-Hsun; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十月-2019Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performanceSingh, Sankalp Kumar; Kakkerla, Ramesh Kumar; Joseph, H. Bijo; Gupta, Ankur; Anandan, Deepak; Nagarajan, Venkatesan; Yu, Hung Wei; Thiruvadigal, D. John; Chang, Edward Yi; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-五月-2019A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effectsNagarajan, Venkatesan; Chen, Kun-Ming; Wang, Huan-Chung; Singh, Sankalp Kumar; Anandan, Deepak; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-六月-2020Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V MeasurementNagarajan, Venkatesan; Chen, Kun-Ming; Chen, Bo-Yuan; Huang, Guo-Wei; Chuang, Chia-Wei; Lin, Chuang-Ju; Anandan, Deepak; Wu, Chai-Hsun; Han, Ping-Cheng; Singh, Sankalp Kumar; Tien-Tung Luong; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-二月-2020Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power ApplicationsHuang, Kuan Ning; Lin, Yueh-Chin; Lin, Jia-Ching; Hsu, Chia Chieh; Lee, Jin Hwa; Wu, Chia-Hsun; Yao, Jing Neng; Hsu, Heng-Tung; Nagarajan, Venkatesan; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chien, Chao Hsin; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
顯示 1 到 7 筆資料，總共 7 筆