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公開日期標題作者
1-十月-2007Investigation of impact ionization in InAs-channel HEMT ford high-speed and low-power applicationsChang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Datta, Suman; Radosavljevic, Marko; Miyamoto, Yasuyuki; Huang, Guo-Wei; 材料科學與工程學系; Department of Materials Science and Engineering
1-四月-2008RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technologyKuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Chang, Chia-Yuan; Miyamoto, Yasuyuki; Datta, Suman; Radosavljevic, Marko; Huang, Guo-Wei; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2010Study of the inversion behaviors of Al(2)O(3)/In(x)Ga(1-x)As metal-oxide-semiconductor capacitors with different In contentsWu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contentsWu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 4 筆資料，總共 4 筆