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顯示 1 到 12 筆資料，總共 12 筆
公開日期標題作者
1-八月-1994ANALYTICAL MODELING OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTIONCHYAN, YF; CHANG, CY; SZE, SM; LIN, MJ; LIAO, K; REIF, R; 電控工程研究所; Institute of Electrical and Control Engineering
1-一月-1973DESIGN CONSIDERATIONS OF LOW-NOISE HIGH-EFFICIENCY SILICON IMPATT DIODESSU, S; SZE, SM; 工學院; College of Engineering
1-四月-1994EFFECT OF GE CONCENTRATION ON STATIC AND MICROWAVE PERFORMANCES IN GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTIONCHYAN, YF; SZE, SM; CHANG, CY; REIF, R; 電控工程研究所; Institute of Electrical and Control Engineering
1-五月-1994EFFECT OF INTERFACIAL OXIDE ON STATIC AND HIGH-FREQUENCY PERFORMANCE IN POLYEMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTIONCHYAN, YF; SZE, SM; CHANG, CY; REIF, R; 電控工程研究所; Institute of Electrical and Control Engineering
1-八月-1994HIGH-LEVEL INJECTION INFLUENCE ON THE HIGH-FREQUENCY PERFORMANCE OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORSCHYAN, YF; SZE, SM; CHANG, CY; CHIUEH, HM; REIF, R; 電子物理學系; Department of Electrophysics
1-九月-1994INFLUENCE OF METALORGANIC SOURCES ON THE COMPOSITION UNIFORMITY OF SELECTIVELY GROWN GAXIN1-XPCHAN, SH; CHANG, CY; SZE, SM; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-十二月-1994INVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCESCHAN, SH; CHANG, CY; SZE, SM; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
24-十月-1994SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING ETHYLDIMETHYLINDIUM AS IN-SOURCECHAN, SH; SZE, SM; CHANG, CY; LEE, WI; 電子物理學系; 電控工程研究所; Department of Electrophysics; Institute of Electrical and Control Engineering
1-十二月-1994SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCESCHAN, SH; SZE, SM; CHANG, CY; LEE, WI; 電子物理學系; Department of Electrophysics
1-九月-1995SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONWANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-1995SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONWANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-五月-1994TEMPERATURE INFLUENCE ON THE GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS WITH ARBITRARY BAND STRUCTURESCHYAN, YF; SZE, SM; CHANG, CY; LIAO, K; REIF, R; 電控工程研究所; Institute of Electrical and Control Engineering
顯示 1 到 12 筆資料，總共 12 筆