1. 目前位置：

瀏覽 的方式： 作者 Shu, CK

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 20 筆資料，總共 20 筆
公開日期標題作者
2000Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structuresLin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC; 光電工程學系; Department of Photonics
2000Effects in carrier dynamics of Isolectronic In doped in GaN films grown by metalorganic vapor phase epitaxyHuang, HY; Shu, CK; Lin, WC; Liao, KC; Chuang, CH; Lee, MC; Chen, WH; Chen, WK; Lee, YY; 電子物理學系; Department of Electrophysics
1998The effects of isoelectronic in-doping in GaN films grown by MOCVDShu, CK; Ou, J; Lin, HC; Pan, YC; Lee, WH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
2000The electronic structure and optical properties of phosphorus implanted GaN filmsShu, CK; Lee, WH; Huang, HY; Chuang, CH; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
2000Gallium K-edge EXAFS study of GaN : Mg filmsPan, YC; Wang, SF; Lee, WH; Lin, WC; Shu, CK; Chiang, CI; Lin, CH; Chang, H; Lee, JF; Jang, LY; Lin, DS; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
1-九月-1999A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaNOu, J; Pan, YC; Lee, WH; Shu, CK; Lin, HC; Lee, MC; Chen, WH; Chiang, CI; Chang, H; Chen, WK; 電子物理學系; Department of Electrophysics
1-二月-1999Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxyPan, YC; Lee, WH; Shu, CK; Lin, HC; Chiang, CI; Chang, H; Lin, DS; Lee, MC; Chen, WK; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
30-十月-2000Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor depositionHuang, HY; Lin, WC; Lee, WH; Shu, CK; Liao, KC; Chen, WK; Lee, MC; Chen, WH; Lee, YY; 電子物理學系; Department of Electrophysics
3-八月-1999Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor depositionShu, CK; Ou, J; Lin, HC; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
3-八月-1998Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor depositionShu, CK; Ou, J; Lin, HC; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
1-四月-2001Luminescence intensity reduction in Mg-doped GaN grown by metalorganic chemical vapor phase epitaxyShu, CK; Chen, HH; Lee, WH; Pan, YC; Huang, HY; Ou, JN; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
2000Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxyShu, CK; Lee, WH; Pan, YC; Huang, HY; Chen, HH; Chen, WH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
2000Optical and electrical investigations of isoelectronic In-doped GaN filmsShu, CK; Lee, WH; Pan, YC; Chen, CC; Lin, HC; Ou, J; Chen, WH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
1-二月-1998Phonon-plasmon interaction in GaN films studied by Raman scatteringShen, CC; Shu, CK; Lin, HC; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
6-五月-2002Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescenceHuang, HY; Chuang, CH; Shu, CK; Pan, YC; Lee, WH; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
1-二月-1998Photoluminescence studies of GaN films of different buffer layer and doping concentrationShen, CC; Shu, CK; Lin, HC; Ou, J; Chen, WK; Lee, MC; Chen, WH; 電子物理學系; Department of Electrophysics
1-二月-1998Photoluminescence studies of GaN films of different buffer layer and doping concentrationShen, CC; Shu, CK; Lin, HC; Ou, J; Chen, WK; Lee, MC; Chen, WH; 電子物理學系; Department of Electrophysics
1-九月-1998Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxyChen, WK; Lin, HC; Pan, YC; Ou, J; Shu, CK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
2-十一月-1998Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxyLee, MC; Lin, HC; Pan, YC; Shu, CK; Ou, J; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
29-五月-2000Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxyHuang, HY; Shu, CK; Lin, WC; Chuang, CH; Lee, MC; Chen, WK; Lee, YY; 電子物理學系; Department of Electrophysics
顯示 1 到 20 筆資料，總共 20 筆