1. 目前位置：

瀏覽 的方式： 作者 Su, N. C.

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 9 筆資料，總共 9 筆
公開日期標題作者
2010Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Location-Controlled Hydrothermal MethodYang, P. Y.; Wang, J. L.; Tsai, W. C.; Wang, S. J.; Chen, P. C.; Su, N. C.; Lin, J. C.; Lee, I. C.; Chang, C. T.; Wei, Y. C.; Cheng, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2009Flat band voltage control on low V(t) metal-gate/high-kappa CMOSFETs with small EOTChin, Albert; Chang, M. F.; Lin, S. H.; Chen, W. B.; Lee, P. T.; Yeh, F. S.; Liao, C. C.; Li, M. -F.; Su, N. C.; Wang, S. J.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-七月-2009Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOTChin, Albert; Chang, M. F.; Lin, S. H.; Chen, W. B.; Lee, P. T.; Yeh, F. S.; Liao, C. C.; Li, M. -F.; Su, N. C.; Wang, S. J.; 電子工程學系及電子研究所; 光電工程學系; 光電工程研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of EO Enginerring
1-十二月-2009High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate DielectricSu, N. C.; Wang, S. J.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2007HtLaON n-MOSFETs using a low work function HfSix gateCheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010A Low Operating Voltage ZnO Thin Film Transistor Using a High-kappa HfLaO Gate DielectricSu, N. C.; Wang, S. J.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2008Low V-t gate-first Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflectionLiao, C. C.; Chin, Albert; Su, N. C.; Li, M. -F.; Wang, S. J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Low V-t gate-first Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflectionLiao, C. C.; Chin, Albert; Su, N. C.; Li, M. -F.; Wang, S. J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Very low V(t) [Ir-Hf]/HfLaO CMOS using novel self-aligned low temperature shallow junctionsCheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 9 筆資料，總共 9 筆