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Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
1-Mar-2006An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperatureLee, W; Su, P; Chen, HY; Chang, CY; Su, KW; Liu, S; Yang, FL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Inversion MOS capacitance extraction for ultra-thin gate oxide using BSIM4Lee, W; Su, KW; Chiang, CS; Liu, S; Su, P; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2005Modeling geometry-dependent floating-body effect using body-source built-in potential lowering for SOI circuit simulationSu, P; Lee, W; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2004Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETsChan, M; Su, P; Wan, H; Lin, CH; Fung, SKH; Niknejad, AM; Hu, CM; Ko, PK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-Jan-1997Monte Carlo calculations of the reflection electron energy loss spectra in goldKwei, CM; Su, P; Chen, YF; Tung, CJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-Jan-1997Monte Carlo calculations of the reflection electron energy loss spectra in goldKwei, CM; Su, P; Chen, YF; Tung, CJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2005On the prediction of geometry-dependent floating-body effect in SOI MOSFETsSu, P; Lee, W; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-Dec-1999Spatial distributions of elastically backscattered electrons from copper and silverKwei, CM; Hung, CJ; Su, P; Tung, CJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 8 of 8