Inversion MOS capacitance extraction for ultra-thin gate oxide using BSIM4

標題:	Inversion MOS capacitance extraction for ultra-thin gate oxide using BSIM4
作者:	Lee, W Su, KW Chiang, CS Liu, S Su, P 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2005
URI:	http://hdl.handle.net/11536/18052
ISBN:	0-7803-9058-X
期刊:	2005 IEEE VLSI-TSA International Symposium on VLSI Technology (VLSI-TSA-TECH), Proceedings of Technical Papers
起始頁:	62
結束頁:	63
顯示於類別：	會議論文