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1-七月-2014Effect of Low Temperature Ge Seed Layer and Post Thermal Annealing on Quality of Ge1-xSix (0.05 <= x <= 0.1) Graded Buffer Layers by UHV-CVDChi-Lang Nguyen; Nguyen Hong Quan; Binh-Tinh Tran; Su, Yung-Hsuan; Tang, Shih-Hsuan; Luo, Guang-Li; Chang, Edward-Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-一月-2014High Quality Ge Epitaxial Films Grown on In0.51Ga0.49P/GaAs and GaAs Substrates by Ultra High Vacuum Chemical DepositionSu, Yung-Hsuan; Tang, Shih-Hsuan; Nguyen, Chi Lang; Kuan, Ching-Wen; Yu, Hung-Wei; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
18-四月-2011High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrateTang, Shih-Hsuan; Chang, Edward Yi; Hudait, Mantu; Maa, Jer-Shen; Liu, Chee-Wee; Luo, Guang-Li; Trinh, Hai-Dang; Su, Yung-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2009InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate DielectricChang, Chia-Yuan; Chang, Edward Yi; Huang, Wei-Ching; Su, Yung-Hsuan; Trinh, Hai-Dang; Hsu, Heng-Tung; Miyamoto, Yasuyuki; 材料科學與工程學系; Department of Materials Science and Engineering
2017超高真空化學氣相沉積系統成長高品質鍺磊晶層於磷化銦鎵/砷化鎵基板蘇詠萱; 張翼; Su, Yung-Hsuan; Chang, Yi; 材料科學與工程學系所
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