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公開日期標題作者
2004Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETsChan, CT; Kuo, CH; Tang, CJ; Chen, MC; Wang, TH; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Low leakage reliability characterization methodology for advanced CMOS with gate oxide in the 1nm rangeChung, SS; Feng, HJ; Hsieh, YS; Liu, A; Lin, WM; Chen, DF; Ho, JH; Huang, KT; Yang, CK; Cheng, O; Sheng, YC; Wu, DY; Shiau, WT; Chien, SC; Liao, K; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETsWang, TH; Tsai, CW; Chen, MC; Chan, CT; Chiang, HK; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005A new insight into the degradation mechanisms of various mobility-enhanced CMOS devices with different substrate engineeringChung, SS; Liu, YR; Wu, SJ; Lai, CS; Liu, YC; Chen, DF; Lin, HS; Shiau, WT; Tsai, CT; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devicesChung, SS; Liu, YR; Yeh, CF; Wu, SR; Lai, CS; Chang, TY; Ho, JH; Liu, CY; Huang, CT; Tsai, CT; Shiau, WT; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1998Novel input ESD protection circuit with substrate-triggering technique in a 0.25-mu m shallow-trench-isolation CMOS technologyKer, MD; Chen, TY; Wu, CY; Tang, H; Su, KC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2000Shallow-trench isolation with raised-field-oxide structureChen, CM; Chang, CY; Chou, JW; Lur, W; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics