瀏覽 的方式: 作者 Tan, Yung-Fang

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公開日期標題作者
1-二月-2020Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access MemoryZhou, Kuan-Ju; Chang, Ting-Chang; Lin, Chih-Yang; Chen, Chun-Kuei; Tseng, Yi-Ting; Zheng, Hao-Xuan; Chen, Hong-Chih; Sun, Li-Chuan; Lien, Chih-Ying; Tan, Yung-Fang; Wu, Chung-Wei; Yeh, Yu-Hsuan; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-三月-2020A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memoryLin, Chih-Yang; Chang, Ting-Chang; Pan, Chih-Hung; Chen, Min-Chen; Xu, You-Lin; Tan, Yung-Fang; Wu, Pei-Yu; Chen, Chun-Kuei; Huang, Wei-Chen; Lin, Yun-Hsuan; Chao, Yu-Ting; Shou, Cheng-Yun; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
23-九月-2020Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAMLin, Shih-Kai; Wu, Cheng-Hsien; Chen, Min-Chen; Chang, Ting-Chang; Lien, Chen-Hsin; Xu, You-Lin; Tseng, Yi-Ting; Wu, Pei-Yu; Tan, Yung-Fang; Sun, Li-Chuan; Zhang, Yong-Ci; Huang, Jen-Wei; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2020Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation AnnealingWu, Pei-Yu; Zheng, Hao-Xuan; Shih, Chih-Cheng; Chang, Ting-Chang; Chen, Wei-Jang; Yang, Chih-Cheng; Chen, Wen-Chung; Tai, Mao-Chou; Tan, Yung-Fang; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Tsai, Tsung-Ming; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1970Incorporation of Resistive Random Access Memory into Low-Temperature Polysilicon Transistor with Fin-Like Structure as 1T1R DeviceHuang, Wei-Chen; Zheng, Hao-Xuan; Chen, Po-Hsun; Chang, Ting-Chang; Tan, Yung-Fang; Lin, Shih-Kai; Zhang, Yong-Ci; Jin, Fu-Yuan; Wu, Chung-Wei; Yeh, Yu-Hsuan; Chou, Sheng-Yao; Huang, Hui-Chun; Chen, Yan-Wen; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2019The influence of temperature on set voltage for different high resistance state in 1T1R devicesTan, Yung-Fang; Su, Yu-Ting; Chen, Min-Chen; Chang, Ting-Chang; Tsai, Tsung-Ming; Tseng, Yi-Ting; Yang, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Lin, Chun-Chu; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-一月-2020Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrodeHuang, Wei-Chen; Huang, Shin-Ping; Chen, Po-Hsun; Chen, Min-Chen; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Tan, Yung-Fang; Wu, Chung-Wei; Yeh, Yuh-Suan; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2019Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset ProcessZheng, Hao-Xuan; Chen, Min-Chen; Chang, Ting-Chang; Su, Yu-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Wu, Pei-Yu; Tan, Yung-Fang; Xu, You-Lin; Zhang, Yong-Ci; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics