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公開日期標題作者
1-六月-2006Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETsChan, Chien-Tai; Tang, Chun-Jung; Wang, Tahui; Wang, Howard C. -H.; Tang, Denny D.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Characterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memoryTang, Chun-Jung; Li, C. W.; Wang, Tahui; Gu, S. H.; Chen, P. C.; Chang, Y. W.; Lu, T. C.; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Investigation of the strained PMOS on (110) substrateTang, Chun-Jung; Huang, Shih-Hian; Wang, Tahui; Chang, Chih-Sheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2009A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge TransportWang, Tahui; Tang, Chun-Jung; Li, C. -W.; Lee, Chih Hsiung; Ou, T. -F; Chang, Yao-Wen; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, K. -C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
5-十月-2009Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistorsTang, Chun-Jung; Wang, Tahui; Chang, Chih-Sheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009先進互補式金氧半電晶體及氮化矽快閃式記憶元件之可靠度分析和蒙地卡羅模擬唐俊榮; Tang, Chun-Jung; 汪大暉; Wang, Tahui; 電子研究所
顯示 1 到 6 筆資料，總共 6 筆