1. 目前位置：

瀏覽 的方式： 作者 Tang, Ying-Tsan

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 7 筆資料，總共 7 筆
公開日期標題作者
1-四月-2010Bias-dependent bandwidth of the conductance in the presence of electron-phonon interactionTang, Ying-Tsan; Lin, Kao-Chin; Chuu, Der-San; 電子物理學系; Department of Electrophysics
1-一月-2011Influence of phonon-associated tunneling rate on transport through a single-molecule transistorTang, Ying-Tsan; Chuu, Der-San; Lin, Kao-Chin; 電子物理學系; Department of Electrophysics
1-三月-2017Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrodeChiu, Yu-Chien; Cheng, Chun-Hu; Chang, Chun-Yen; Tang, Ying-Tsan; Chen, Min-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2016A Numerical Study of Si-TMD Contact with n/p Type Operation and Interface Barrier Reduction for Sub-5 nm Monolayer MoS2 FETTang, Ying-Tsan; Li, Kai-Shin; Li, Lain-Jong; Li, Ming-Yang; Lin, Chang-Hsien; Chen, Yi-Ju; Chen, Chun-Chi; Su, Chuan-Jung; Wu, Bo-Wei; Wu, Cheng-San; Chen, Min-Cheng; Shieh, Jia-Min; Yeh, Wen-Kuan; Su, Po-Cheng; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming; 電機工程學系; Department of Electrical and Computer Engineering
2016One-Transistor Ferroelectric Versatile Memory: Strained-Gate Engineering for Realizing Energy-Efficient Switching and Fast Negative-Capacitance OperationChiu, Yu-Chien; Cheng, Chun-Hu; Chang, Chun-Yen; Tang, Ying-Tsan; Chen, Min-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Self-organized Pairs of Ge Double Quantum Dots with Tunable Sizes and Spacings Enable Room-Temperature Operation of Qubit and Single-Electron DevicesPeng, Kang-Ping; Chen, Ching-Lun; Tang, Ying-Tsan; Kuo, David; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010單分子電晶體內部之力學震盪對電子傳輸的影響唐英瓚; Tang, Ying-Tsan; 褚德三; Chuu, Der-San; 電子物理系所
顯示 1 到 7 筆資料，總共 7 筆