標題: Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode
作者: Chiu, Yu-Chien
Cheng, Chun-Hu
Chang, Chun-Yen
Tang, Ying-Tsan
Chen, Min-Cheng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ferroelectrics;strain;negative capacitance;HfZrO;phase transitions;transistors
公開日期: 1-三月-2017
摘要: In this work, we report a ferroelectric memory with strainedgate engineering. The memory window of the high strain case was improved by similar to 71% at the same ferroelectric thickness. The orthorhombic phase transition (from ferroelectric to antiferroelectric transition) plays a key role in realizing negative capacitance effect at high gate electric field. Based on a reliable first principles calculation, we clarify that the gate strain accelerates the phase transformation from metastable monoclinic to orthorhombic and thus largely enhances the ferroelectric polarization without increasing dielectric thickness. This ferroelectric strain technology shows the potential for emerging device application.
URI: http://dx.doi.org/10.1002/pssr.201600368
http://hdl.handle.net/11536/145296
ISSN: 1862-6254
DOI: 10.1002/pssr.201600368
期刊: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume: 11
顯示於類別:期刊論文