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顯示 1 到 11 筆資料，總共 11 筆
公開日期標題作者
1-四月-200510 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengthsChang, YH; Kuo, HC; Chang, YA; Chu, JT; Tsai, MY; Wang, SC; 光電工程學系; Department of Photonics
2004Advanced handoff controls in third generation CDMA wireless systemsHuang, CY; Tsai, MY; Huang, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001The design of automatic-lock-automatic-retrieve single-chip IPM for converter systemsChang, LK; Tsai, MY; 電控工程研究所; Institute of Electrical and Control Engineering
1-四月-2002Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damageLee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2005High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelengthKuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC; 光電工程學系; Department of Photonics
10-十二月-2004MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emissionKuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-七月-2001Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxideTsai, MY; Lin, HC; Lee, DY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-一月-2006Quaternary AlInGaN multiple quantum well 368 nm light-emitting diodeWang, TC; Kuo, HC; Lee, ZH; Chuo, CC; Tsai, MY; Tsai, CE; Lee, TD; Lu, TC; Chi, J; 光電工程學系; Department of Photonics
1-一月-2005Single mode 1.27-mu m InGaAS : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasersKuo, HC; Chang, YA; Chang, YH; Chu, JT; Tsai, MY; Wang, SC; 光電工程學系; Department of Photonics
1-四月-2006Study of InGaN multiple quantum dots by metal organic chemical vapor depositionWang, TC; Kuo, HC; Lu, TC; Tsai, CE; Tsai, MY; Hsu, JT; Yang, JR; 光電工程學系; Department of Photonics
1-八月-2005Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layersLai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ; 光電工程學系; Department of Photonics
顯示 1 到 11 筆資料，總共 11 筆