Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers

Abstract

The effects of nitrogen incorporation into the In(0.4)Ga(0.6)As(1-x)N(x)/GaAs single quantum wells (SQWs), where x = 0.5 and 2%, grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD) were investigated using photoluminescence (PL) and high-resolution transmission electron microscopy (HRTEM). The evolution of the excitation-dependent PL and PL-peak position with temperature between 10 and 300 K shows that quantum-dot-like states occurred at that high nitrogen incorporation (x = 2%) and were confirmed by an HRTEM image which showed small dark regions about 2 - 3 nm in size was found in the interface of In(0.4)Ga(0.6)As(0.98)N(0.02) and GaAs. Our investigations indicate that high nitrogen incorporation into the In(0.4)Ga(0.6)As(1-x)N(x)/GaAs system influenced carrier localization and might cause the formation of the dot-like states.