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公開日期標題作者
1-一月-2011Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS CapacitorsKanda, T.; Zade, D.; Lin, Y. -C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 交大名義發表; National Chiao Tung University
2009Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS StructureFunamiz, K.; Lin, Y. C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Chang, E. Y.; Hattori, T.; Iwai, H.; 交大名義發表; National Chiao Tung University
1-七月-2011Improving electrical characteristics of W/HfO(2)/In(0.53)Ga(0.47)As gate stacks by altering deposition techniquesZade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2011Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniquesZade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 材料科學與工程學系; Department of Materials Science and Engineering
2016Optimization of gate insulator material for GaN MIS-HEMTLin, Y. C.; Lin, T. W.; Wu, C. H.; Yao, J. N.; Hsu, H. T.; Shih, W. C.; Kakushima, K.; Tsutsui, K.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
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