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公開日期標題作者
1-八月-1997The electrical characteristics of the amorphous silicon thin film transistors with dual intrinsic layersTsai, JW; Cheng, HC; Chou, A; Su, FC; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1997The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect statesCheng, HC; Tsai, JW; Huang, CY; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1997The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect statesCheng, HC; Tsai, JW; Huang, CY; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon depositionTsai, JW; Huang, CY; Tai, YH; Cheng, HC; Su, FC; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon depositionTsai, JW; Huang, CY; Tai, YH; Cheng, HC; Su, FC; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics