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公開日期標題作者
1-八月-2017Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (001) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor depositionMinh Thien Huu Ha; Sa Hoang Huynh; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi; 材料科學與工程學系; 電機學院; 國際半導體學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering; International College of Semiconductor Technology
1-五月-2018Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor depositionMinh Thien Huu Ha; Sa Hoang Huynh; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Lee, Ching Ting; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-三月-2018In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma TreatmentLuc, Quang Ho; Yang, Kun Sheng; Lin, Jia Wei; Chang, Chia Chi; Huy Binh Do; Huynh, Sa Hoang; Minh Thien Huu Ha; Tuan Anh Nguyen; Lin, Yueh Chin; Hu, Chenming; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電機學院; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-五月-2017Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device ApplicationHuy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Tuan Anh Nguyen; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
9-一月-2017Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor depositionSa Hoang Huynh; Minh Thien Huu Ha; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi; 材料科學與工程學系; 電機學院; 國際半導體學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering; International College of Semiconductor Technology
1-四月-2018Nonlinear dependence of X-ray diffraction peak broadening in InxGa1-xSb epitaxial layers on GaAs substratesSa Hoang Huynh; Minh Thien Huu Ha; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
顯示 1 到 6 筆資料，總共 6 筆