In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment

doi:10.1109/LED.2018.2798589

Title:	In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
Authors:	Luc, Quang Ho Yang, Kun Sheng Lin, Jia Wei Chang, Chia Chi Huy Binh Do Huynh, Sa Hoang Minh Thien Huu Ha Tuan Anh Nguyen Lin, Yueh Chin Hu, Chenming Chang, Edward Yi 材料科學與工程學系光電系統研究所照明與能源光電研究所電機學院電子工程學系及電子研究所國際半導體學院 Department of Materials Science and Engineering Institute of Photonic System Institute of Lighting and Energy Photonics College of Electrical and Computer Engineering Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology
Keywords:	3D MOSFETs;In-0.53 Ga0.47As;RP treatment;PBTI reliability;III-V
Issue Date:	1-Mar-2018
Abstract:	This letter presents a remote NH3/N-2 plasma treatment after gate oxide deposition for improving the electrical characteristics and the reliability of In0.53Ga0.47As FinFET. The plasma treatment enhanced drive current (I-DS), transconductance (G(m)), subthreshold swing (SS), flicker noise, and positive bias temperature lifetime, suggesting that this plasma treatment significantly improves the quality of the etched In0.53Ga0.47As channel interface. In0.53Ga0.47As FinFETs and gate-all-around FETs were fabricated with the proposed in situ remote-plasma treatment and characterized.
URI:	http://dx.doi.org/10.1109/LED.2018.2798589 http://hdl.handle.net/11536/144638
ISSN:	0741-3106
DOI:	10.1109/LED.2018.2798589
Journal:	IEEE ELECTRON DEVICE LETTERS
Volume:	39
Begin Page:	339
End Page:	342
Appears in Collections:	Articles