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dc.contributor.authorLuc, Quang Hoen_US
dc.contributor.authorYang, Kun Shengen_US
dc.contributor.authorLin, Jia Weien_US
dc.contributor.authorChang, Chia Chien_US
dc.contributor.authorHuy Binh Doen_US
dc.contributor.authorHuynh, Sa Hoangen_US
dc.contributor.authorMinh Thien Huu Haen_US
dc.contributor.authorTuan Anh Nguyenen_US
dc.contributor.authorLin, Yueh Chinen_US
dc.contributor.authorHu, Chenmingen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2018-08-21T05:53:24Z-
dc.date.available2018-08-21T05:53:24Z-
dc.date.issued2018-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2018.2798589en_US
dc.identifier.urihttp://hdl.handle.net/11536/144638-
dc.description.abstractThis letter presents a remote NH3/N-2 plasma treatment after gate oxide deposition for improving the electrical characteristics and the reliability of In0.53Ga0.47As FinFET. The plasma treatment enhanced drive current (I-DS), transconductance (G(m)), subthreshold swing (SS), flicker noise, and positive bias temperature lifetime, suggesting that this plasma treatment significantly improves the quality of the etched In0.53Ga0.47As channel interface. In0.53Ga0.47As FinFETs and gate-all-around FETs were fabricated with the proposed in situ remote-plasma treatment and characterized.en_US
dc.language.isoen_USen_US
dc.subject3D MOSFETsen_US
dc.subjectIn-0.53 Ga0.47Asen_US
dc.subjectRP treatmenten_US
dc.subjectPBTI reliabilityen_US
dc.subjectIII-Ven_US
dc.titleIn0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2018.2798589en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume39en_US
dc.citation.spage339en_US
dc.citation.epage342en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000426794100003en_US
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