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公開日期標題作者
1983AMPLIFICATION OF TOTAL-REFLECTION-MODE ACOUSTIC SURFACE-WAVES IN N-TYPE GAAS FILMSWU, CC; TSAI, J; 電子物理學系; 應用數學系; Department of Electrophysics; Department of Applied Mathematics
15-五月-1994ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAASCHEN, HD; FENG, MS; LIN, KC; CHEN, PA; WU, CC; WU, JW; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-七月-1995BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORLIN, KC; CHANG, CY; WU, CC; CHEN, HD; CHEN, PA; CHAN, SH; WU, JW; CHANG, EY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-七月-1989BETA-MN STRUCTURE IN AN FE-AL-MN-CR ALLOYLIU, TF; WU, CC; 交大名義發表; 機械工程學系; National Chiao Tung University; Department of Mechanical Engineering
1-六月-1993CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONCHEN, HD; CHANG, CY; LIN, KC; CHAN, SH; FENG, MS; CHEN, PA; WU, CC; JUANG, FY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-十一月-1993CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODESHUANG, KF; TAI, K; WU, CC; WYNN, JD; 電子物理學系; Department of Electrophysics
22-七月-1993CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODESTAI, K; HUANG, KF; WU, CC; WYNN, JD; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-一月-1993CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODESHUANG, KF; TAI, K; WU, CC; WYNN, JD; 電子物理學系; Department of Electrophysics
22-七月-1993CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODESTAI, K; HUANG, KF; WU, CC; WYNN, JD; 電子物理學系; 光電工程研究所; Department of Electrophysics; Institute of EO Enginerring
10-四月-1987COUPLING MECHANISMS OF ACOUSTIC 2ND-HARMONIC GENERATION IN PIEZOELECTRIC SEMICONDUCTORSWU, CC; TSAI, JS; 電控工程研究所; Institute of Electrical and Control Engineering
25-十一月-1993DESIGN OF HOPFIELD-TYPE ASSOCIATIVE MEMORY WITH MAXIMAL BASIN OF ATTRACTIONCHANG, JY; WU, CC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
20-六月-1993DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITIONWU, CC; LIN, KC; CHAN, SH; FENG, MS; CHANG, CY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-一月-1975EFFECT OF ENERGY-BAND STRUCTURE ON MAGNETORESISTANCE IN N-TYPE INSBWU, CC; TSAI, J; WU, CC; 工學院; College of Engineering
1982EFFECT OF ENERGY-BAND STRUCTURES ON THE PROPAGATION OF ULTRASOUND IN DEGENERATE SEMICONDUCTORSWU, CC; TSAI, JS; 應用數學系; Department of Applied Mathematics
1-一月-1980EFFECT OF ENERGY-BAND STRUCTURES ON TRANSVERSE MAGNETORESISTANCE OF DEGENERATE SEMICONDUCTORS IN STRONG MAGNETIC-FIELDSWU, CC; CHEN, A; 應用數學系; Department of Applied Mathematics
1-五月-1989THE EFFECT OF ENERGY-BANDS ON THE AMPLIFICATION OF SURFACE PHONONS IN THIN BISMUTH-FILMSWU, CC; TSAI, J; 電控工程研究所; Institute of Electrical and Control Engineering
1-一月-1976EFFECT OF NON-ELLIPSOIDAL NONPARABOLIC BAND-STRUCTURE ON MAGNETORESISTANCE IN BISMUTHWU, CC; TSAI, J; 應用數學系; Department of Applied Mathematics
1982EFFECT OF NON-PARABOLICITY ON AMPLIFICATION OF SURFACE PHONONS IN PIEZOELECTRIC SEMICONDUCTOR-FILMSWU, CC; TSAI, J; 應用數學系; Department of Applied Mathematics
1982EFFECT OF NON-PARABOLICITY ON LONGITUDINAL CONDUCTIVITY OF DEGENERATE SEMICONDUCTORS FOR TRANSVERSE ULTRASOUND IN STRONG MAGNETIC-FIELDSWU, CC; TSAI, J; 應用數學系; Department of Applied Mathematics
1-一月-1978EFFECT OF NON-PARABOLICITY ON TRANSVERSE MAGNETORESISTANCE OF SEMICONDUCTORS IN STRONG MAGNETIC-FIELDSWU, CC; CHEN, A; 應用數學系; Department of Applied Mathematics