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公開日期標題作者
2007Comparisons on performance improvement by nitride capping layer among different channel directions nMOSFETsTsai, Tzu-, I; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Hsueh, Fu-Kuo; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Impacts of a buffer layer and hi-wafers on the performance of strained-channel NMOSFETs with SiN capping layerTsai, Tzu-, I; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Wan, Chia-Chen; Hsueh, Fu-Kuo; Lin, Horng-Chih; Chao, Tien-Sheng; Huang, Tiao-Yuan; 物理研究所; 電子工程學系及電子研究所; Institute of Physics; Department of Electronics Engineering and Institute of Electronics
1-十月-2008Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layerTsai, Tzu-I; Lin, Horng-Chih; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Hsueh, Fu-Kuo; Chao, Tien-Sheng; Huang, Tiao-Yuan; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2007Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layerTsai, Tzu-, I; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Wan, Chia-Chen; Hsueh, Fu-Kuo; Lin, Horng-Chih; Cha, Tien-Sheng; Huang, Tiao-Yuan; 物理研究所; 電子工程學系及電子研究所; Institute of Physics; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 4 筆資料，總共 4 筆