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顯示 1 到 11 筆資料，總共 11 筆
公開日期標題作者
1-七月-2008Carrier transportation mechanism of the TaN/HfO(2)/IL/Si structure with silicon surface fluorine implantationWu, Woei Cherng; Lai, Chao-Sung; Wang, Tzu-Ming; Wang, Jer-Chyi; Hsu, Chih Wei; Ma, Ming Wen; Lo, Wen-Cheng; Chao, Tien Sheng; 電子物理學系; Department of Electrophysics
1-六月-2020Dimensionally anisotropic graphene with high mobility and a high on-off ratio in a three-terminal RRAM deviceLiu, Bo; Tai, Han Hsiang; Liang, Hanyuan; Zheng, En-Yan; Sahoo, Mamina; Hsu, Chih Hsien; Chen, Tsung-Cheng; Huang, Chin An; Wang, Jer-Chyi; Hou, Tuo-Hung; Lai, Chao-Sung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Fluorinated HfO2 Gate Dielectrics Engineering for CMOS by pre- and post-CF4 Plasma PassivationWu, Woei-Chemg; Lai, Chao-Sung; Lee, Shih-Ching; Ma, Ming-Wen; Chao, Tien-Sheng; Wang, Jer-Chyi; Hsu, Chih-Wei; Chou, Pai-Chi; Chen, Jian-Hao; Kao, Kuo-Hsing; Lo, Wen-Cheng; Lu, Tsung-Yi; Tay, Li-Lin; Rowell, Nelson; 電子物理學系; Department of Electrophysics
13-八月-2019A Fluorographene-Based Synaptic TransistorLiu, Bo; Hong, Ming-Chun; Sahoo, Mamina; Ong, Bin Leong; Tok, Eng Soon; Di, MengFu; Ho, Yu-Ping; Liang, Hanyuan; Bow, Jong-Shing; Liu, Zhiwei; Wang, Jer-Chyi; Hou, Tuo-Hung; Lai, Chao-Sung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thicknessWu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Wang, Jer-Chyi; Chen, Jian-Hao; Ma, Ming-Wen; Lai, Chao-Sung; Yang, Tsung-Yu; Chen, Tzu-Ping; Chen, Chien-Hung; Lin, Chih-Hung; Chen, Hwi-Huang; Ko, Joe; 物理研究所; Institute of Physics
1-三月-2007Highly reliable multilevel and 2-bit/cell operation of wrapped select gate (WSG) SONOS memoryWu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Wang, Jer-Chyi; Chen, Jian-Hao; Lai, Chao-Sung; Yang, Tsung-Yu; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy Cheng; 電子物理學系; Department of Electrophysics
2008Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurementWu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng; 電子物理學系; Department of Electrophysics
2007Performance enhancement for strained HfO(2) nMOSFET with contact etch stop layer (CESL) under pulsed-IV measurementWu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng; Ho, Yi-Hsun; 電子物理學系; Department of Electrophysics
1-十二月-2008Positive Bias Temperature Instability (PBTI) Characteristics of Contact-Etch-Stop-Layer-Induced Local-Tensile-Strained HfO(2) nMOSFETWu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng; 電子物理學系; Department of Electrophysics
1-十二月-2008Positive Bias Temperature Instability (PBTI) Characteristics of Contact-Etch-Stop-Layer-Induced Local-Tensile-Strained HfO2 nMOSFETWu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
20-六月-2018Programmable Synaptic Metaplasticity and below Femtojoule Spiking Energy Realized in Graphene-Based Neuromorphic MemristorLiu, Bo; Liu, Zhiwei; Chiu, In-Shiang; Di, MengFu; Wu, YongRen; Wang, Jer-Chyi; Hou, Tuo-Hung; Lai, Chao-Sung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 11 筆資料，總共 11 筆