標題: | A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness |
作者: | Wu, Woei-Cherng Chao, Tien-Sheng Peng, Wu-Chin Yang, Wen-Luh Wang, Jer-Chyi Chen, Jian-Hao Ma, Ming-Wen Lai, Chao-Sung Yang, Tsung-Yu Chen, Tzu-Ping Chen, Chien-Hung Lin, Chih-Hung Chen, Hwi-Huang Ko, Joe 物理研究所 Institute of Physics |
公開日期: | 2007 |
摘要: | High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride-silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well V-th distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance. |
URI: | http://hdl.handle.net/11536/12323 |
ISBN: | 978-1-4244-0584-8 |
期刊: | 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Proceedings of Technical Papers |
起始頁: | 10 |
結束頁: | 11 |
顯示於類別: | 會議論文 |