標題: A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness
作者: Wu, Woei-Cherng
Chao, Tien-Sheng
Peng, Wu-Chin
Yang, Wen-Luh
Wang, Jer-Chyi
Chen, Jian-Hao
Ma, Ming-Wen
Lai, Chao-Sung
Yang, Tsung-Yu
Chen, Tzu-Ping
Chen, Chien-Hung
Lin, Chih-Hung
Chen, Hwi-Huang
Ko, Joe
物理研究所
Institute of Physics
公開日期: 2007
摘要: High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride-silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well V-th distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.
URI: http://hdl.handle.net/11536/12323
ISBN: 978-1-4244-0584-8
期刊: 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Proceedings of Technical Papers
起始頁: 10
結束頁: 11
Appears in Collections:Conferences Paper