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顯示 1 到 19 筆資料，總共 19 筆
公開日期標題作者
1-一月-2000Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n(+)-p structuresChen, JF; Wang, JS; Wang, PY; Chen, NC; Hsu, NC; 電子物理學系; Department of Electrophysics
1-十二月-1999Capacitance dispersion in n-LT-i-p GaAs structures with the low-temperature layers grown at different temperaturesChen, JF; Chen, NC; Wang, PY; Wang, JS; Weng, CM; 電子物理學系; Department of Electrophysics
1-二月-2000Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodesChen, JF; Wang, PY; Wang, JS; Tsai, CY; Chen, NC; 電子物理學系; Department of Electrophysics
6-十一月-2000Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dotsWang, JS; Chen, JF; Huang, JL; Wang, PY; Guo, XJ; 電子物理學系; Department of Electrophysics
1-六月-2000Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodesChen, JF; Wang, PY; Wang, JS; Wong, HZ; 電子物理學系; Department of Electrophysics
15-十月-1998Effects of high-resistivity, low-temperature layer in transient capacitance measurements of GaAs n-i-p structuresChen, JF; Wang, PY; Chen, NC; 電子物理學系; Department of Electrophysics
1-二月-1997Electrical characteristics and deep-level admittance spectroscopies of low-temperature grown GaAs p-i-n structuresChen, JF; Chen, NC; Wang, PY; Tsai, MH; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
2-三月-1998Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperatureChen, NC; Wang, PY; Chen, JF; 電子物理學系; Department of Electrophysics
1-十一月-1999Observation of a dominant EL2-like mid-gap trap in In0.12Ga0.88As/GaAs superlattice grown at low temperature by molecular beam epitaxyChen, JF; Wang, PY; Wang, JS; Wong, HZ; 電子物理學系; Department of Electrophysics
23-八月-1999Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperatureChen, JF; Wang, JS; Wang, PY; Wong, HZ; 電子物理學系; Department of Electrophysics
18-十月-1999Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wellsChen, JF; Wang, PY; Tsai, CY; Wang, JS; Chen, NC; 電子物理學系; Department of Electrophysics
15-九月-2004Properties of defect traps in triple-stack InAs/GaAs quantum dots and effect of annealingChen, JF; Hsiao, RS; Shih, SH; Wang, PY; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
1-二月-1998Role of 0.66 eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAsChen, NC; Wang, PY; Chen, JF; 電子物理學系; Department of Electrophysics
1-二月-2000Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescenceChen, JF; Wang, PY; Wang, JS; Chen, NC; Guo, XJ; Chen, YF; 電子物理學系; Department of Electrophysics
1-三月-1996Structural and electrical properties of GaSb, AlGaSb and their heterostructures grown on GaAs by metalorganic chemical vapor depositionWang, PY; Chen, JF; Chen, WK; 電子物理學系; Department of Electrophysics
1-六月-1996Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxyChen, JF; Chen, NC; Chiu, SY; Wang, PY; Lee, WI; Chin, A; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-六月-1996Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxyChen, JF; Chen, NC; Chiu, SY; Wang, PY; Lee, WI; Chin, A; 電子物理學系; Department of Electrophysics
1-三月-1999Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum wellWang, PY; Chen, JF; Wang, JS; Chen, NC; Chen, YS; 電子物理學系; Department of Electrophysics
1-三月-2000Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs Schottky diodesChen, JF; Chen, NC; Wang, JS; Wang, PY; 電子物理學系; Department of Electrophysics
顯示 1 到 19 筆資料，總共 19 筆