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公開日期標題作者
27-十月-20051.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injectionPeng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC; 光電工程學系; Department of Photonics
1-八月-200410 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantationLai, FI; Hsueh, TH; Chang, YH; Kuo, HC; Wang, SC; Laih, LH; Song, CP; Yang, HP; 光電工程學系; Department of Photonics
1-四月-200510 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengthsChang, YH; Kuo, HC; Chang, YA; Chu, JT; Tsai, MY; Wang, SC; 光電工程學系; Department of Photonics
1-二月-2006AlGaInP light-emitting diodes with stripe patterned omni-directional reflectorLee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; 光電工程學系; Department of Photonics
15-五月-2006Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxyHuang, GS; Yao, HH; Lu, TC; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-六月-2004As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformityLaih, LH; Kuo, HC; Lin, GR; Laih, LW; Wang, SC; 光電工程學系; Department of Photonics
1999Atomic force microscope study of GaN films grown by hydride vapor phase epitaxyFang, HM; Wang, YK; Tsai, RY; Chu, CF; Wang, SC; 光電工程學系; Department of Photonics
1-五月-2001Beryllium-implanted P-type GaN with high carrier concentrationYu, CC; Chu, CF; Tsai, JY; Lin, CF; Lan, WH; Chiang, CI; Wang, SC; 光電工程學系; Department of Photonics
1-十月-1998Broad-band (>= 20 GHz) laser-diode-based optoelectronic microwave phase shifterLin, GR; Hwang, TS; Chuang, YH; Wang, SC; Pan, CL; 光電工程學系; Department of Photonics
1-五月-2006Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxyKuo, SY; Kei, CC; Hsiao, CN; Chao, CK; Lai, FI; Kuo, HC; Hsieh, WF; Wang, SC; 光電工程學系; Department of Photonics
12-二月-2001Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layersLu, TC; Fu, R; Shieh, HM; Huang, KJ; Wang, SC; 光電工程學系; Department of Photonics
2000Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structuresLin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC; 光電工程學系; Department of Photonics
19-一月-2004Characteristics of stable emission GaN-based resonant-cavity light-emitting diodesLin, CF; Yao, HH; Lu, JW; Hsieh, YL; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-四月-2005Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasksHsueh, TH; Huang, HW; Kao, CC; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-四月-2002Comparison of high-resistivity ZnO films sputtered on different substratesLin, GR; Wang, SC; 光電工程學系; Department of Photonics
15-二月-2003Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-offChu, CF; Yu, CC; Cheng, HC; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics
25-二月-2004Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor depositionLu, TC; Tsai, JY; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
6-二月-2006Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor depositionHuang, GS; Lu, TC; Yao, HH; Kuo, HC; Wang, SC; Lin, CW; Chang, L; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-七月-2005Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAsLiu, TA; Lin, GR; Lee, YC; Wang, SC; Tani, M; Wu, HH; Pan, CL; 光電工程學系; Department of Photonics
2000Design of efficient high-gower diode-end-pumped TEMoo Nd : YVO4 laserChen, YF; Liao, CC; Lan, YP; Wang, SC; 電子物理學系; Department of Electrophysics
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