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公開日期標題作者
26-十月-2017Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation TreatmentYuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-十月-2016Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3: ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influencePan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Po-Hsun; Chang-Chien, Shi-Wang; Chen, Min-Chen; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Recommended Methods to Study Resistive Switching DevicesLanza, Mario; Wong, H-S Philip; Pop, Eric; Ielmini, Daniele; Strukov, Dimitri; Regan, Brian C.; Larcher, Luca; Villena, Marco A.; Yang, J. Joshua; Goux, Ludovic; Belmonte, Attilio; Yang, Yuchao; Puglisi, Francesco M.; Kang, Jinfeng; Magyari-Kope, Blanka; Yalon, Eilam; Kenyon, Anthony; Buckwell, Mark; Mehonic, Adnan; Shluger, Alexander; Li, Haitong; Hou, Tuo-Hung; Hudec, Boris; Akinwande, Deji; Ge, Ruijing; Ambrogio, Stefano; Roldan, Juan B.; Miranda, Enrique; Sune, Jordi; Pey, Kin Leong; Wu, Xing; Raghavan, Nagarajan; Wu, Ernest; Lu, Wei D.; Navarro, Gabriele; Zhang, Weidong; Wu, Huaqiang; Li, Runwei; Holleitner, Alexander; Wurstbauer, Ursula; Lemme, Max C.; Liu, Ming; Long, Shibing; Liu, Qi; Lv, Hangbing; Padovani, Andrea; Pavan, Paolo; Valov, Ilia; Jing, Xu; Han, Tingting; Zhu, Kaichen; Chen, Shaochuan; Hui, Fei; Shi, Yuanyuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-一月-2017Resistance Switching Characteristics Induced by O-2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access MemoryChen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
十二月-2016Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide ElectrodePan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Shih, Chih-Cheng; Lin, Chih-Yang; Chen, Po-Hsun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 5 筆資料，總共 5 筆