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公開日期標題作者
2009Design of High-Performance and Highly Reliable nMOSFETs with Embedded Si:C S/D Extension Stressor(Si:C S/D-E)Chung, Steve S.; Hsieh, E. R.; Liu, P. W.; Chiang, W. T.; Tsai, S. H.; Tsai, T. L.; Huang, R. M.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2007Effective surface treatments for selective epitaxial SiGe growth in locally strained pMOSFETsCheng, P. L.; Liao, C. I.; Wu, H. R.; Chen, Y. C.; Chien, C. C.; Yang, C. L.; Tzou, S. F.; Tang, J.; Kodali, R.; Washington, L.; Cho, Y.; Chang, V. C.; Fu, T.; Hsu, W. S.; 交大名義發表; National Chiao Tung University
15-二月-2008Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOSChenga, P. L.; Liao, C. I.; Chien, C. C.; Yang, C. L.; Ting, S. F.; Jeng, L. S.; Huang, C. T.; Cheng, Osbert; Tzou, S. F.; Hsu, W. S.; 交大名義發表; National Chiao Tung University
2009A New and Simple Experimental Approach to Characterizing the Carrier Transport and Reliability of Strained CMOS Devices in the Quasi-Ballistic RegimeHsieh, E. R.; Chung, Steve S.; Liu, P. W.; Chiang, W. T.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2012Suppressing Device Variability by Cryogenic Implant for 28-nm Low-Power SoC ApplicationsYang, C. L.; Tsai, C. H.; Li, C. I.; Tzeng, C. Y.; Lin, G. P.; Chen, W. J.; Chin, Y. L.; Liao, C. I.; Chan, M.; Wu, J. Y.; Hsieh, E. R.; Guo, B. N.; Lu, S.; Colombeau, B.; Chung, S. S.; Chen, I. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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