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二月-2016A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applicationsFatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2018Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic ApplicationsYao, Jing-Neng; Lin, Yueh-Chin; Hsu, Heng-Tung; Yang, Kai-Chun; Hsu, Hisang-Hua; Sze, Simon M.; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2015Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic ApplicationsFatah, Faiz Aizad; Lin, Yueh-Chin; Lee, Tsung-Yun; Yang, Kai-Chun; Liu, Ren-Xuan; Chan, Jing-Ray; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
2015側壁蝕刻與非合金歐姆接觸之增強型砷化銦通道高電子遷移率電晶體應用於高頻與低耗能邏輯元件之特性評估楊凱鈞; Yang, Kai-Chun; 張翼; 馬哲申; Chang, Yi; Maa, Jer-Shen; 光電系統研究所
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