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公開日期標題作者
1-十一月-2001Characteristics of Pb(Zr0.53Ti0.47)O-3 on metal and Al2O3/Si substratesSun, CL; Chen, SY; Yang, MY; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
17-二月-2003Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layersSun, CL; Chen, SY; Yang, MY; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
17-二月-2002Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layersSun, CL; Chen, SY; Yang, MY; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-七月-2000Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstromWu, YH; Yang, MY; Chin, A; Chen, WJ; Kwei, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003High density RF MIM capacitors using high-kappa AlTaOx dielectricsHuang, CH; Yang, MY; Chin, A; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2003High-density MIM canpacitors using AlTaOx dielectricsYang, MY; Huang, CH; Chin, A; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004High-density RF MIM capacitors using high-k La2O3 dielectricsYang, MY; Yu, DS; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2005Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrateCheng, CC; Chien, CH; Chen, CW; Hsu, SL; Yang, MY; Huang, CC; Yang, FL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2001Stack gate PZT/Al2O3 one transistor ferroelectric memoryChin, A; Yang, MY; Sun, CL; Chen, SY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十月-2003Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectricsYang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, BJ; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 10 筆資料，總共 10 筆