Stack gate PZT/Al2O3 one transistor ferroelectric memory

標題:	Stack gate PZT/Al2O3 one transistor ferroelectric memory
作者:	Chin, A Yang, MY Sun, CL Chen, SY 材料科學與工程學系電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics
關鍵字:	Al2O3;ferroelectric;memory;PZT
公開日期:	1-七月-2001
摘要:	We have developed single transistor ferroelectric memory using stack gate PZT/Al2O3 structure. For the same similar to 40 Angstrom dielectric thickness, the PZT/Al2O3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state, The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.
URI:	http://dx.doi.org/10.1109/55.930683 http://hdl.handle.net/11536/29531
ISSN:	0741-3106
DOI:	10.1109/55.930683
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	22
Issue:	7
起始頁:	336
結束頁:	338
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。