Stack gate PZT/Al2O3 one transistor ferroelectric memory

Abstract

We have developed single transistor ferroelectric memory using stack gate PZT/Al2O3 structure. For the same similar to 40 Angstrom dielectric thickness, the PZT/Al2O3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state, The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.