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公開日期標題作者
1996980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergenceYen, ST; Lin, G; Liu, DC; Tsai, CM; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Direct experimental evidence of the hole capture by resonant levels in boron doped siliconYen, ST; Tulupenko, V; Cheng, ES; Dalakyan, A; Lee, CP; Chao, KA; Belykh, V; Abramov, A; Ryzhkov, V; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1998Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasersYen, ST; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-三月-2005Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructuresZakharova, A; Yen, ST; Nilsson, K; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2004Evidence for capture of holes into resonant states in boron-doped siliconYen, ST; Tulupenko, VN; Cheng, ES; Chung, PK; Lee, CP; Dalakyan, AT; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1996Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structureLin, G; Yen, ST; Lee, CP; Liu, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1996Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structureLin, G; Yen, ST; Lee, CP; Liu, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十二月-2001Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wellsZakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2004Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wellsZakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1996A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold currentYen, ST; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1996A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold currentYen, ST; Lee, CP; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
15-十月-2003Resonant hydrogenic impurity states and 1s-2p(0) transitions in coupled double quantum wellsYen, ST; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-七月-2004A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fieldsLapushkin, I; Zakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1996Semiconductor lasers with unconventional cladding structures for small beam divergence and low threshold currentYen, ST; Lee, CP; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-九月-2005Six-band k center dot p calculation of spin-dependent interband tunneling in strained broken-gap heterostructures under a quantizing magnetic fieldZakharova, A; Nilsson, K; Chao, KA; Yen, ST; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2006Spin polarization of an electron-hole gas in InAs/GaSb quantum wells under a dc currentZakharova, A; Lapushkin, I; Nilsson, K; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-八月-2002Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wellsZakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1997Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum statesYen, ST; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1997Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum statesYen, ST; Lee, CP; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-一月-1996Theoretical investigation on semiconductor lasers with passive waveguidesYen, ST; Lee, CP; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
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