標題: | A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current |
作者: | Yen, ST Lee, CP 交大名義發表 電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-九月-1996 |
摘要: | A novel cladding structure is proposed and analyzed for semiconductor quantum-well lasers ttl achieve a small vertical-beam divergence and a low threshold current density simultaneously, This cladding structure is designed to guide a wide optical mode but with a high peak intensity in quantum wells. The wide expansion of the optical mode results in a small beam divergence. In addition, the high optical intensity in quantum wells causes a low threshold current density, This novel cladding structure is optimized. The result shows that this type of cladding structures can achieve a beam divergence as small as 14.6 degrees while the threshold current density remains small. |
URI: | http://dx.doi.org/10.1109/3.535363 http://hdl.handle.net/11536/1089 |
ISSN: | 0018-9197 |
DOI: | 10.1109/3.535363 |
期刊: | IEEE JOURNAL OF QUANTUM ELECTRONICS |
Volume: | 32 |
Issue: | 9 |
起始頁: | 1588 |
結束頁: | 1595 |
顯示於類別: | 期刊論文 |