瀏覽 的方式: 作者 Zhang, Shengdong

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公開日期標題作者
1-二月-2018Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film TransistorsYang, Chung-I; Chang, Ting-Chang; Liao, Po-Yung; Chen, Bo-Wei; Chou, Wu-Ching; Chen, Guan-Fu; Huang, Shin-Ping; Zheng, Yu-Zhe; Wang, Yu-Xuan; Liu, Hsi-Wen; Lin, Chien-Yu; Lin, Yu-Shan; Lu, Ying-Hsin; Zhang, Shengdong; 電子物理學系; Department of Electrophysics
1-一月-2018Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film TransistorsYang, Chung-I.; Chang, Ting-Chang; Liao, Po-Yung; Chen, Li-Hui; Chen, Bo-Wei; Chou, Wu-Ching; Chen, Guan-Fu; Lin, Sung-Chun; Yeh, Cheng-Yen; Tsai, Cheng-Ming; Yu, Ming-Chang; Zhang, Shengdong; 電子物理學系; Department of Electrophysics
1-六月-2019An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film TransistorsChen, Guan-Fu; Chen, Hong-Chih; Chang, Ting-Chang; Huang, Shin-Ping; Chen, Hua-Mao; Liao, Po-Yung; Chen, Jian-Jie; Kuo, Chuan-Wei; Lai, Wei-Chih; Chu, Ann-Kuo; Lin, Sung-Chun; Yeh, Cheng-Yen; Chang, Chia-Sen; Tsai, Cheng-Ming; Yu, Ming-Chang; Zhang, Shengdong; 光電工程學系; Department of Photonics
1-六月-2017Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatmentDu, Xiaoqin; Wu, Xiaojing; Chang, Ting-Chang; Chang, Kuan-Chang; Pan, Chih-Hung; Wu, Cheng-Hsien; Lin, Yu-Shuo; Chen, Po-Hsun; Zhang, Shengdong; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2017Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-k Spacer StructureTseng, Yi-Ting; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Shih, Chih-Cheng; Huang, Hui-Chun; Yang, Cheng-Chi; Lin, Chih-Yang; Wu, Cheng-Hsien; Zheng, Hao-Xuan; Zhang, Shengdong; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics