標題: | Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatment |
作者: | Du, Xiaoqin Wu, Xiaojing Chang, Ting-Chang Chang, Kuan-Chang Pan, Chih-Hung Wu, Cheng-Hsien Lin, Yu-Shuo Chen, Po-Hsun Zhang, Shengdong Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-六月-2017 |
摘要: | The successful recovery of resistive switching random access memory (RRAM) devices that have undergone switching failure is achieved by introducing a low-temperature supercritical-fluid process that passivates the switching layer. These failed RRAM devices, which are incapable of switching between high-and low-resistance states, were treated with supercritical carbon dioxide with pure water at 120 degrees C for 1 h. After the treatment, the devices became operational again and showed excellent current-voltage (I-V) characteristics and reliability as before. On the basis of the current conduction mechanism fitting results, we propose a model to explain the phenomenon. (C) 2017 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/APEX.10.064001 http://hdl.handle.net/11536/145586 |
ISSN: | 1882-0778 |
DOI: | 10.7567/APEX.10.064001 |
期刊: | APPLIED PHYSICS EXPRESS |
Volume: | 10 |
顯示於類別: | 期刊論文 |