標題: Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatment
作者: Du, Xiaoqin
Wu, Xiaojing
Chang, Ting-Chang
Chang, Kuan-Chang
Pan, Chih-Hung
Wu, Cheng-Hsien
Lin, Yu-Shuo
Chen, Po-Hsun
Zhang, Shengdong
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-六月-2017
摘要: The successful recovery of resistive switching random access memory (RRAM) devices that have undergone switching failure is achieved by introducing a low-temperature supercritical-fluid process that passivates the switching layer. These failed RRAM devices, which are incapable of switching between high-and low-resistance states, were treated with supercritical carbon dioxide with pure water at 120 degrees C for 1 h. After the treatment, the devices became operational again and showed excellent current-voltage (I-V) characteristics and reliability as before. On the basis of the current conduction mechanism fitting results, we propose a model to explain the phenomenon. (C) 2017 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.10.064001
http://hdl.handle.net/11536/145586
ISSN: 1882-0778
DOI: 10.7567/APEX.10.064001
期刊: APPLIED PHYSICS EXPRESS
Volume: 10
顯示於類別:期刊論文