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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Cheng, C. H.Subject: search.filters.subject.TiLaO

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Now showing 1 - 3 of 3
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    Gate-first n-MOSFET with a sub-0.6-nm EOT gate stack
    (2013-09-01)
    Cheng, C. H.
    ;
    Chou, K. I.
    ;
    Chin, A.
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We report a self-aligned and gate-first TiLaO/La2O3 n-MOSFET with an equivalent oxide thickness (EOT) of 0.57 nm and low threshold voltage (V-t) of 0.3 V. The small EOT MOSFET can be reached using La-based interfacial layer with strong bond enthalpy (La-O, 799 kJ/mol) to suppress the formation of defect-rich low- interfacial layer and simultaneously block titanium atom inter-diffusion to avoid additional EOT increase. This gate-first low-EOT MOSFET exhibits the potential to integrate with current CMOS process. (C) 2013 Elsevier B.V. All rights reserved.
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    Achieving low sub-0.6-nm EOT in gate-first n-MOSFET with TiLaO/CeO2 gate stack
    (2013-04-01)
    Cheng, C. H.
    ;
    Chou, K. I.
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We report a gate-first TiLaO/CeO2 n-MOSFET with an equivalent oxide thickness (EOT) of only 0.56 nm and threshold voltage (V-t) of 0.31 V. This small EOT MOSFET was achieved by employing high-kappa CeO2 interfacial layer with high bond enthalpy (795 kJ/mol) to replace low-kappa SiO2 with close bond enthalpy (800 kJ/mol). The cerium silicate can aggressively scale EOT down to sub-0.6-nm EOT region without increasing gate leakage, which is urgently needed for 16 nm technology node. (C) 2013 Elsevier Ltd. All rights reserved.
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    Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode
    (2007-12-01)
    Cheng, C. H.
    ;
    Pan, H. C.
    ;
    Yang, H. J.
    ;
    Hsiao, C. N.
    ;
    Chou, C. P.
    We have fabricated high-kappa. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 x 10(-7) A/cm(2) was obtained at 125 degrees C for 24-fF/mu m(2) density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset.