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Author: search.filters.author.Huang, GWSubject: search.filters.subject.low-frequency noise

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    Low-frequency noise in partially depleted SOI MOSFETs operating from linear region to saturation region at various temperatures
    (2004-04-01)
    Chen, KM
    ;
    Hu, HH
    ;
    Huang, GW
    ;
    Yeh, WK
    ;
    Chang, CY
    The low-frequency noise characteristics of partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) in silicon-on-insulator technology at various temperatures were investigated. For floating-body devices, a Lorentzian-like noise overshoot is observed due to the floating-body effect. The noise overshoot is dependent on temperature and bias, and can be reduced using a source-to-body-connected structure. At high temperature or high drain bias, the 1/f noise will be observed, and it is temperature-independent due to the trap-induced mobility fluctuation in the channel.
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    Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stress
    (2005-06-01)
    Chen, KM
    ;
    Hu, HH
    ;
    Huang, GW
    ;
    Chang, CY
    ;
    電子工程學系及電子研究所
    In this study, we determined the effects of hot-carrier stress on the low-frequency noise characteristics of partially depleted metal-oxide-semi conductor field-effect transistors (MOSFETs) in silicon-on-insulator (SOI) technology. In devices with a floating-body configuration, kink-related excess noise was observed due to the floating-body effect. The level of this excess noise decreased after normal-mode stress, while it was masked by 1/f noise after reverse-mode stress. The effects of stress-generated interface traps on the drain-to-body leakage current and the floating-body effect were also determined and used to explain the noise behavior. Moreover, the stress-induced 1/f noise degradation in floating-body devices and body-contact devices was studied. It was found that the 1/f degradation of body-contact devices is more significant than that of floating-body devices after hot-carrier stress.
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    Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
    (2005-09-01)
    Wu, JW
    ;
    You, JW
    ;
    Ma, HC
    ;
    Cheng, CC
    ;
    Hsu, CF
    Low-frequency flicker noise in analog n-MOSFETs with 15-angstrom gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneling from Si substrate to polysilicon gate takes place and results in the splitting of electron and hole quasi-Fermi-levels in the channel. The excess low-frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi-levels. Random telegraph signals due to the capture of channel electrons and holes is characterized in a small area device to support our model.