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Stress reduction of (111) homoepitaxial diamond films on nickel-coated substrate
(2014-11-25)
Chiu, Kun-An
;
Tian, Jr-Sheng
;
Wu, Yue-Han
;
Peng, Chun-Yen
;
Chang, Li
Crack-free (111) homoepitaxial diamond films were grown on Ni-coated diamond substrates by microwave plasma chemical vapor deposition. After diamond deposition, the Ni islands with a size of 50-1000 nm were formed and embedded underneath the diamond films. The tensile stress in the diamond films evaluated with micro-Raman spectroscopy can be significantly reduced with the embedded Ni islands, which allows the growth of similar to 5 mu m thick crack-free (111) homoepitaxial diamond films with a good quality, compared with those directly deposited on substrates without coating. (c) 2014 Elsevier B.V. All rights reserved.
石墨烯及氧化鋅/氮化鎵材料之成長及其元件應用
(2011)
紀國鐘
;
CHI GOU-CHUNG
;
國立交通大學光電工程學系（所）
在本研究計畫中，本實驗室將進行氧化鋅(ZnO)/氮化鎵(GaN)異質結構與石墨烯 (Graphene)材料之成長特性以及其應用元件之材料物理特性研究。最近幾年，氧化鋅材料吸引了非常多國內外的研究團隊投入研究。因為氧化鋅具有很高的熱穩定性和化學穩定性，它和氮化鎵一樣是屬於直接能隙半導體，在常溫下能帶寬度約3.37eV，而且氧化鋅的自由激子的束縛能為60meV，比氮化鎵的25meV還要來的大，因此在室溫下氧化鋅中的激子對依然可以存在，因此理論上將氧化鋅做為發光二極體材料其發光效率會比氮化鎵還要來的好。對於將氧化鋅應用於發光二極體材料，在目前而言，有一個共通的問題。即為摻雜為p型的氧化鋅材料一直沒有辦法穩定的形成。目前各研究團隊也對於p型的氧化鋅之成長機制解釋也是眾說紛紜。因此，將氧化鋅材料成長在不同材料之p型半導體上以研究氧化鋅材料發光二極體發光機制及其物理特性的第一課題。在成長方面我們將利用化學氣相成長(CVD)法，在改變不同成長條件下，例如成長溫度以及氣體流量，以不同方向性之氮化鎵基板成長氧化鋅奈米線以及薄膜，並且研究成長條件與極化與非極化基板對於氧化鋅材料的成長機制，缺陷成因及物理性質做深入探討。由於半導體之摻雜與材料缺陷特性息息相關，故我們也將利用在不同方向性基板上以不同成長條件之氧化鋅材料作進一步摻雜的研究，以了解氧化鋅材料摻雜的物理特性。材料應用方面將分成兩大部分，第一將利用氧化鋅/氮化鎵異質結構為主體結構，以研究氧化鋅材料發光二極體的發光特性。其中包含了研究極化與非極化之氧化鋅/氮化鎵異質結構發光二極體，氧化鋅同質結構發光二極體。另一方面將應用氧化鋅的表面化學吸附特性，進一步的研究以氧化鋅作為改質閘極之氮化鎵高速電晶體的感應器元件特性，例如一氧化碳偵測器。石墨烯也是最近引起廣泛研究之半導體材料。利用化學氣相成長法可以改變成長之環境，例如成長壓力，氣體流量，以及成長溫度等，以進一步的研究其成長機制以及摻雜特性。利用超高真空高能電子繞射可以更進一步的了解成長條件對於缺陷的影響。目的在於成長出低缺陷的薄膜。在應用元件方面，石墨烯是單層碳原子結構的二維空間排列且其電子遷移率當其載子濃度為1012cm-2時高達106 cm2/V．S。且其透明度高達97.98%。，故石墨烯成為最具潛力的太陽能光電池之透明電極材料之一。另一方面，石墨烯材料之導熱性極佳。其導熱係數高達5300 W/m‧K，比奈米碳管以及金剛石更佳，且其會隨著溫度升高而下降。故石墨烯材料也是新一代的光電元件散熱材料。故本計畫將把石墨烯應用於太陽能電池上，當作透明導電薄膜以及散熱層，希望可以改善太陽能電池之外部效率。另一方面，石墨烯表面因為是碳的sp2的鍵結，我們可以合成不同的短鏈ＤＮＡ(aptamer)在其表面上做改質的實驗，藉由其高速電子遷移率，若有吸附到欲感應物會造成其電性的改變。我們希望可以藉由此特性發展出極高靈敏度以及高專一性之生物感應器。
化學氣相沈積氧化鉭在Noble金屬電極之動態隨機存取記憶體電容器之研究
(1999)
羅正忠
;
交通大學電子工程系
極大型積體電路元件相關耐火金屬化物及電介質技術
(1999)
張國明
;
CHANG KOW-MING
;
交通大學電子工程研究所
Effect of Temperature Gradient Direction in the Catalyst Nanoparticle on CNTs Growth Mode
(2010-09-01)
Lo, An-Ya
;
Liu, Shang-Bin
;
Kuo, Cheng-Tzu
;
材料科學與工程學系
;
Department of Materials Science and Engineering
To improve the understanding on CNT growth modes, the various processes, including thermal CVD, MP-CVD and ECR-CVD, have been used to deposit CNTs on nanoporous SBA-15 and Si wafer substrates with C(2)H(2) and H(2) as reaction gases. The experiments to vary process parameter of Delta T, defined as the vector quantities of temperature at catalyst top minus it at catalyst bottom, were carried out to demonstrate its effect on the CNT growth mode. The TEM and TGA analyses were used to characterize their growth modes and carbon yields of the processes. The results show that Delta T can be used to monitor the temperature gradient direction across the catalyst nanoparticle during the growth stage of CNTs. The results also indicate that the tip-growth CNTs, base-growth CNTs and onion-like carbon are generally fabricated under conditions of Delta T > 0, < 0 and similar to 0, respectively. Our proposed growth mechanisms can be successfully adopted to explain why the base- and tip-growth CNTs are common in thermal CVD and plasma-enhanced CVD processes, respectively. Furthermore, our experiments have also successfully demonstrated the possibility to vary Delta T to obtain the desired growth mode of CNTs by thermal or plasma-enhanced CVD systems for different applications.
Electronic properties of phosphorus-doped triode-type diamond field emission arrays
(2001-11-01)
Chen, CF
;
Tsai, CL
;
Lin, CL
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode using IC technology. We use a bias-assisted microwave plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped and B-doped diamond. Based on our experimental results, it showed dendrite-like diamond with non-doped and nanotube-like diamond with B- or P- doping. Doping phosphorus or boron can enhance its electric characteristic by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped, B-doped and P-doped is 15, 8 and 5 V, respectively. The field emission current (I-a) of non-doped, B-doped and P-doped is 4 muA (at 45 V), 76 muA (at 77 V) and 322 muA (at 120 V), respectively. (C) 2001 Elsevier Science B.V. All rights reserved.
Chemically vapor deposited Cu films on Ar-plasma-treated TiN substrate
(2002-01-01)
Lin, CL
;
Chen, PS
;
Chen, MC
;
電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Chemically vapor deposited (CVD) Cu films on TiN substrates with and without Ar plasma treatment prior to Cu film deposition and the effects of postdeposition thermal annealing were investigated. Cu films deposited on an Ar-plasma-treated TiN substrate have a number of favorable properties over films deposited on a TiN substrate without the plasma treatment. These include a smoother film surface, regular arrangement of Cu grains, and markedly increased ( 111)-preferred orientation. The postdeposition thermal annealing enhanced the (111)-preferred orientation and decreased the resistivity of the as-deposited Cu films. A combined process including Ar plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N-2 ambient is proposed in order to achieve low-resistivity and highly (111)-oriented Cu film deposition. In this way, Cu films with a resistivity of 1.90muOhm.cm and a Cu(111)/Cu(200) peak ratio of 7.08 were obtained.
Growth of diamond films with bias during microwave plasma chemical vapor deposition
(2002-03-01)
Lu, CA
;
Chang, L
;
Huang, BR
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Diamond films on 3-inch diameter (100) silicon wafers were synthesized with bias during microwave plasma vapor deposition (MPCVD). The deposition parameters were as follows: 0.13% CH4 in H-2 pressure at 30 torr; deposition temperature at 768-869 degreesC, and a deposition time of 3-3.5 h. The bias voltage applied to the substrates during diamond growth varied from 0 to -450 V. The deposited films were characterized by Raman spectroscopy and electron microscopy. The results show that the film properties are uniform across the whole 3-inch diameter area. Raman spectra show that the ratio of sp(3) to sp(2) is increased with the bias voltage up to -350 V, while further increases in voltage resulted in a decreased ratio. It was found that column-shaped grains of diamond were directly grown from the substrate surface without grain coalescence in the lateral direction during growth. The nucleation density of diamond with biased growth was of the order of 10(9) cm(-2). (C) 2002 Elsevier Science B.V. All rights reserved.
Diamond deposition on Si (111) and carbon face 6H-SiC (0001) substrates by positively biased pretreatment
(2002-03-01)
Chang, TF
;
Chang, L
;
材料科學與工程學系
;
Department of Materials Science and Engineering
The growth of textured diamond films on Si (111) and carbon face 6H-SiC (0001) has been achieved by positive bias-enhanced-nucleation in microwave plasma chemical vapor deposition. A bias voltage of + 100 to +300 V, 3% CH4 concentration in bias step, and 0.33% CH4 concentration in growth step were used to synthesize diamond films on Si and carbon face 6H-SiC. Highly oriented diamond films were observed by scanning electron microscopy and X-ray diffraction patterns. Cross-sectional transmission electron microscopy showed that the interface between diamond and Si substrate was smooth, while it was rough between diamond and SiC. It also showed that diamond films were directly grown on both substrates. (C) 2002 Elsevier Science B.V. All lights reserved.
Study of carbon nanoemitters using CO2-CH4 gas mixtures in triode-type field emission arrays
(2002-03-01)
Chen, CF
;
Tsai, CL
;
Lin, CL
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In this study. we used methane/carbon dioxide gas mixtures to deposit nanoemitters on the gate-structured metal-insulator-semiconductor (MIS) diodes. Due to the nanoemitters growing in a high carbon concentration gas source of CH4/CO2, the growth rate is better than conventional mixtures by using hydrocarbons diluted in hydrogen. Moreover, the bias also promotes the growth rate in the CH4/CO2 gas mixtures. In addition, selected area deposition (SAD) of emitters was successfully achieved by using the Pt layer as inhibitor in the bias assisted microwave plasma chemical vapor deposition (BAMPCVD). The field emission. current and the current density of nanoemitters on field emission arrays (FEAs) are 154 LA and 490 mA cm(-2), respectively. This may be due to the following reasons: (I) short gate-emitter spacing; (II) small gate aperture; and (III) emitter with a sharp feature. (C) 2002 Elsevier Science B.V. All rights reserved.

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